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Fast response to process disturbances is critical for Semiconductor Dry Etch short processing times
Dry etching can also be known as plasma etching and it is the process of removing a pattern of semiconductor material from the wafer by masking out areas on the surface and radiating the exposed surface with ions. It is done with ions rather than with chemical treatment. The ions are typically, reactive gases such as oxygen, boron, fluorocarbons. Through multiple etching stages a masking substance is used to resist etching and thereby protect a part of the wafer.
During the process, gas entry causes temperature disturbances. Eurotherm offers accurate temperature measurement, precise heater control and fast response to temperature disturbances.
With Eurotherm support, customers can manage ±1°C precision temperature control during the Helium cooling process stage, and ±0.5°C for other stages.
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